Sze Pei Lim, Senior Global Product Manager for Semiconductor and Advanced Materials at Indium Corporation, presented the paper Thermal Stress Study of Low Temperature Material for 1st Level Interconnect at the International Conference on Electronics Packaging and Hybrid Bonding Symposium (ICEP-HBS), held April 14–17 in Hiroshima, Japan. The study is part of a collaborative International Electronics Manufacturing Initiative (INEMI) project involving Indium Corporation metallurgist Danyang Zheng and five additional industry contributors.
Key findings indicate that SnBi solder interconnects deliver superior dimensional stability compared to SAC305, reducing warpage by more than 70 microns attributable to the lower processing temperatures inherent to low-temperature alloys. Critically, the SnBi interconnects were shown to match SAC305 in thermal aging and thermal shock resistance — addressing a longstanding concern around the mechanical robustness of bismuth-containing alloys in first-level interconnect applications.
The results are directly relevant to high-performance, high-density package architectures — including chiplets and system-in-package (SiP) designs — where thermomechanical reliability and warpage control are primary qualification criteria. For European EMS providers and OSAT facilities evaluating material transitions in advanced packaging lines, the data offers a quantified basis for low-temperature alloy adoption.
Quelle: Indium Corporation – https://www.indium.com/press-releases/indium-corporation-presents-collaborative-research-on-solder-alloy-reliability-for-heterogeneous-integration-at-icep-hbs/
