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    Startseite/Semiconductor-packaging/Artikel
    Canon Launches FPA-6400ES6a KrF Lithography System with 400 Wafers-per-Hour Throughput
    Foto: Canon Europe (semicon)
    Semiconductor-packaging

    Canon Launches FPA-6400ES6a KrF Lithography System with 400 Wafers-per-Hour Throughput

    New scanner targets advanced memory and logic device manufacturing with 4.0 nm overlay accuracy and enhanced warpage compensation
    Veröffentlicht
    10. November 2026
    Lesezeit
    2 Minuten
    Rubrik
    Semiconductor-packaging

    Canon Inc. has announced the FPA-6400ES6a, a new KrF (krypton fluoride) scanner for semiconductor lithography, scheduled for launch in early December 2026. The system is designed for memory and logic device manufacturing and addresses two converging pressures in the industry: rising demand for throughput driven by generative AI applications, and tighter process control requirements stemming from increasingly multilayered device architectures.

    At the core of the FPA-6400ES6a is a newly developed ultra-high-acceleration stage that reduces stage travel time compared to the previous generation, enabling Canon to claim a throughput of 400 wafers per hour. This figure is significant in a market segment where KrF scanners serve a broad range of mature and mid-node processes, and where productivity per tool directly impacts fab economics.

    Overlay accuracy is cited at 4.0 nm, which Canon describes as industry-leading for this class of system. The result is achieved in part through newly developed vibration-suppression technology. As device structures become more complex — particularly in NAND flash and advanced DRAM, where dozens of exposure steps may be required — overlay errors accumulate across layers, making sub-5 nm overlay performance at KrF wavelengths increasingly relevant even for non-leading-edge nodes.

    To address the warpage challenges inherent in bonded wafers and thick multilayer stacks, the FPA-6400ES6a offers enhanced wafer holding capability accommodating warpage of up to 700 µm. This specification reflects the practical reality of 3D NAND and advanced packaging workflows, where wafer distortion has become a limiting factor for lithographic yield.

    Canon has also introduced an optional High Alignment Light Source (Hi-ALS) for its proprietary image alignment system. The Hi-ALS allows users to select the alignment measurement wavelength to match the optical properties of different process films and substrate materials, enabling more precise alignment across a wider range of manufacturing steps. This flexibility is particularly relevant for fabs running diverse product mixes on shared tool sets.

    From a European perspective, the FPA-6400ES6a is relevant to semiconductor manufacturing sites and equipment suppliers active in the region, including back-end and advanced packaging operations where KrF lithography tools support fan-out, wafer-level packaging, and interposer patterning processes. As European chipmakers and EMS providers continue to invest in domestic semiconductor capacity under the European Chips Act framework, tools combining high throughput with tight overlay control at established wavelengths represent a practical complement to leading-edge EUV investment. Canon's announcement positions the FPA-6400ES6a as a productivity-focused option within that equipment mix.

    Quelle: Canon Europe (semicon) – https://global.canon/en/news/2026/20261110.html

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