Key trends in manufacturing
As well as an increase in new manufacturing facilities being built in Europe, the trade fair will delve into other the important growth drivers in the field of power electronics, including the so-called wide-bandgap semiconductors gallium nitride (GaN) and silicon carbide (SiC). Although these are currently still more expensive than classic power semiconductors such as silicon IGBTs or MOSFETs, they can switch significantly higher voltages and frequencies.
The biggest advantage of GaN and SiC is their large bandgap of 3.4 eV for GaN and 3.2 eV for SiC, compared to 1.1 eV for Si IGBTs. This brings advantages such as efficient heat dissipation, high switching frequencies, high breakdown strength, and low power consumption, resulting in high energy efficiency.
Special Exhibit
In addition, the VDMA—the event’s main conceptual sponsor—offers visitors to its Special Exhibit (stand B2, Hall 461) an insight into various research and development collaborations in the field of power electronics. For example, Schweizer Elektronik will demonstrate how a Si-MOSFET improves the power section of an inverter for a starter generator. Silicon Austria Labs will show, among other things, how modern power components can make an energy converter control panel for wind turbines significantly more efficient. Elektra Solar will also present an electrically powered aircraft.
An ideal platform for exchange
More than 1,400 exhibitors will gather at the event. True to the motto “the pulse of innovation,” visitors can delve deeper into the world of SiC, GaN, and Si-IGBTs and obtain the latest information directly from exhibitors or through extensive additional offerings such as panel discussions, lectures, and networking events.
Additionally, SEMICON Europa invites visitors to discover the entire value chain of the semiconductor industry in Halls B1, C1, and C2.
