“GaN technology is paving the way for more energy-efficient and CO2-saving solutions that support decarb onization. Adoption in applications like mobile charging, data center power supplies, residential solar inverters, and onboard chargers for electric vehicles is at the tipping point, leading to a dynamic market growth,” said Jochen Hanebeck, CEO of Infineon. “The planned acquisition of GaN Systems will significantly accelerate our GaN roadmap, based on unmatched R&D resources, application understanding and customer project pipeline.“
“The GaN Systems team is excited about teaming up with Infineon to create highly differentiating customer offerings,,” Jim Witham, CEO of GaN Systems, said. ‘With our joint expertise in providing superior solutions, we will optimally leverage the potential of GaN. Combining foundry corridors with in-house manufacturing capacity enables maximum growth capability to serve the accelerating adoption of GaN in a wide range of our target markets.”
As a wide bandgap material, GaN offers customer value by higher power density, higher efficiency, and size reductions, especially at higher switching frequencies. These properties enable energy savings and smaller form factors, making GaN suited for a wide range of applications. By 2027, market analysts expect the GaN revenue for power applications to grow by 56% CAGR to approx. USD 2 billion (source: Yole, Compound Semiconductor Market Monitor-Module I Q4 2022). In February 2022, Infineon announced doubling down on wide bandgap by investing more than EUR 2 billion in a new frontend fab in Kulim, Malaysia. The first wafers will leave the fab in the second half of 2024, adding to Infineon’s existing wide bandgap manufacturing capacities in Villach, Austria.
