Entegris has announced an expansion of its strategic partnership with Kioxia Corporation, targeting materials innovation for future generations of BiCS FLASH 3D flash memory. The collaboration links Entegris' capabilities in materials science, computational modelling and semiconductor process solutions with Kioxia's memory process integration expertise. AI-enabled simulation and digital-twin technologies will be used to explore a broader materials design space, pre-screen candidates and guide physical testing — with the aim of shortening development cycles for advanced memory nodes.
The Geino Technology Center in Mie Prefecture, Japan, will serve as the primary site for joint work, connecting device-level requirements directly with materials development and experimental validation. The expanded scope reflects the growing performance and power-efficiency demands placed on memory by AI workloads in data-centre and edge-computing environments, where next-generation 3D NAND architectures will require tighter co-optimisation of materials, process chemistry and device design.
For the semiconductor packaging and advanced materials supply chain, the partnership signals continued investment in virtual-to-physical development methodologies as a tool for compressing materials qualification timelines at advanced technology nodes.
Quelle: Entegris (semicon) – https://investor.entegris.com/news/news-details/2026/Entegris-Expands-Strategic-Partnership-with-Kioxia-to-Accelerate-Materials-Innovation-for-Next-Generation-Memory-in-the-AI-Era/default.aspx
