The Kyocera copper-bonded silicon-nitride ceramic substrate achieved 5,000 cycles of air-to-air temperature runs with a condition of –60 to +175°C without any failure. Its ceramic base is silicon nitride (Si3N4) with 850MPa of flexural strength and 5.0MPam1/2 of fracture toughness. This material is much stronger compared to other ceramics, for example, alumina (Al2O3) with 274MPa of flexural strength and 3.3 MPam1/2 of fracture toughness and aluminum nitride (AlN) with 400MPa and 2.7 MPam1/2. Copper is bonded on the substrate by an active metal-bonding method using silver-copper-titanium brazing metallization. Active metal bonding is a stronger method of adhering copper to ceramics when compared with conventional methods without metallization, typically using a copper-oxide process. This copper-bonded substrate is mechanically much stronger than conventional copper-bonded material. The technology is suitable for use in power-microelectronics applications in automotive, aerospace and other harsh environments.
EPP EUROPE 455
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